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IRF630NLPBF中文资料IRF数据手册PDF规格书
IRF630NLPBF规格书详情
描述 Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free
产品属性
- 型号：
IRF630NLPBF
- 功能描述：
MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-262-3 |
1944 |
询价 | |||
IR |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
询价 | ||
IR |
06+ |
原产原装 |
2000 |
全新原装 绝对有货 |
询价 | ||
Infineon Technologies |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
23+ |
TO-262 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IR |
24+ |
NA/ |
3350 |
原装现货,当天可交货,原型号开票 |
询价 | ||
IR |
17+ |
TO-220 |
6200 |
100%原装正品现货 |
询价 | ||
IR |
24+ |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 | |||
IR |
23+ |
TO-220 |
20000 |
原装正品,假一罚十 |
询价 | ||
IR |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
询价 |
