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IRF630NLPBF中文资料IRF数据手册PDF规格书
IRF630NLPBF规格书详情
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free
产品属性
- 型号：
IRF630NLPBF
- 功能描述：
MOSFET MOSFT 200V 9.5A 300mOhm 23.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERNATIONAL RECTIFIER |
2023+ |
SMD |
14499 |
安罗世纪电子只做原装正品货 |
询价 | ||
IR |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
IR |
21+ |
TO-262 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IR |
2022+ |
TO-262 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
Infineon Technologies |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
询价 | ||
IR |
24+ |
TO-262 |
100 |
只做原厂渠道 可追溯货源 |
询价 | ||
IR |
23+ |
TO-262-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
11+PBF |
TO-262 |
500 |
现货 |
询价 | ||
IR |
23+ |
TO-262 |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 |
