IRF630FP中文资料意法半导体数据手册PDF规格书
IRF630FP规格书详情
Description
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.
General features
■ Extremely high dv/dt capability
■ Very low intrinsic capacitances
■ Gate charge minimized
Applications
■ Switching application
产品属性
- 型号:
IRF630FP
- 功能描述:
MOSFET POWER MOSFET
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
TTO-220F |
990000 |
明嘉莱只做原装正品现货 |
询价 | ||
ST |
23+ |
TOP220 |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
ST |
24+ |
TO220ISOFULLPACK |
8866 |
询价 | |||
ST |
17+ |
TO-220 |
6200 |
询价 | |||
STMicroelectronics |
2022+ |
TO-220-3 整包 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ST/意法 |
22+ |
N |
28000 |
原装现货只有原装.假一罚十 |
询价 | ||
ST |
1923+ |
TO2220F |
12900 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
ST |
23+ |
TRANS |
65480 |
询价 | |||
ST |
22+ |
TO-220F |
66900 |
原厂原装现货 |
询价 | ||
ST |
2020+ |
TO220F |
200 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 |