IRF630中文资料尼爾半導體数据手册PDF规格书
IRF630规格书详情
DESCRIPTION
The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors.
They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation.
They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators, convertors, motor drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These transistors can be operated directly from integrated circuits.
FEATURES
● RDS(ON) = 0.40Ω @ VGS = 10V
● Ultra low gate charge(43nC max.)
● Low reverse transfer capacitance
(CRSS = 80pF typical)
● Fast switching capability
● 100 avalanche energy specified
● Improved dv/dt capability
● 150°C operation temperature
产品属性
- 型号：
IRF630
- 功能描述：
MOSFET N-Ch 200 Volt 10 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | |||
ST/意法 |
23+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST |
2020+ |
TO-220 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IR |
22+ |
TO-220 |
8900 |
全新正品现货 有挂就有现货 |
询价 | ||
IR |
24+ |
TO 220 |
161449 |
明嘉莱只做原装正品现货 |
询价 | ||
ST(意法半导体) |
23+ |
TO220 |
6000 |
诚信服务，绝对原装原盘 |
询价 | ||
STMicro. |
23+ |
TO-220 |
7750 |
全新原装优势 |
询价 | ||
STM |
NA |
16355 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
FSC |
1926+ |
TO-220 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
ST(意法半导体) |
23+ |
TO220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 |
