IRF624B中文资料仙童半导体数据手册PDF规格书

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.

特性 Features

• 4.1A, 250V, RDS(on) = 1.1Ω @VGS = 10 V

• Low gate charge ( typical 13.5 nC)

• Low Crss ( typical 9.5 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability