IRF630中文资料新泽西半导体数据手册PDF规格书
IRF630规格书详情
Description
These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits.
● Low RDS(on)
● VQS Rated at ±20 V
● Silicon Gate for Fast Switching Speeds
● oss. vos(on), Specified at Elevated Temperature
● Rugged
● Low Drive Requirements
● Ease of Paralleling
产品属性
- 型号：
IRF630
- 功能描述：
MOSFET N-Ch 200 Volt 10 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
23+ |
TO220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
HARRIS |
2016+ |
TO-220 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ON |
23+ |
DIP-16 |
6500 |
全新原装假一赔十 |
询价 | ||
IR |
三年内 |
1983 |
纳立只做原装正品13590203865 |
询价 | |||
ST/意法 |
23+ |
NA/ |
50 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ST |
2020+ |
TO-220 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
询价 | ||
IR |
22+ |
TO-220 |
8900 |
全新正品现货 有挂就有现货 |
询价 | ||
IR |
24+ |
TO 220 |
161449 |
明嘉莱只做原装正品现货 |
询价 | ||
ST(意法半导体) |
23+ |
TO220 |
6000 |
诚信服务，绝对原装原盘 |
询价 | ||
STMicro. |
23+ |
TO-220 |
7750 |
全新原装优势 |
询价 |
