N-channel mosfet transistor

♦ Features · With TO-220F package · Low on-stateand thermal resistance · Fast switching · VDSS=200V; RDS(ON)≤0.4Ω;ID=9A · 1.gate 2.drain 3.source

文件：121.75 Kbytes 页数：1 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

• DESCRITION • Designed for high speed applications, such as switching power supplies , AC and DC motor controls ,relay and solenoid drivers and other pulse. • FEATURES • RDS(on) =0.4Ω • 6A and 200V • single pulse avalanche energy rated • SOA is Power- Dissipation Limited • Linear Transfer

文件：59.11 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.25 Ω ■ AVALANCE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100 °C ■ APPLICATION ORIENTED CHARACHTERIZATION APPLICATIONS ■ HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CO

文件：190.54 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET

Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. General features ■ Extremely high dv/dt capability ■ Very low intrinsic

文件：104.75 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-channel 200V - 0.35廓 - 9A TO-220/TO-220FP Mesh overlay??II Power MOSFET

文件：336.19 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体