N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Isolated TO-220 option simplifies assembly and cuts risk of accidental sh

文件：343.5 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET

Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Isolated TO-220 option simplifies assembly and cuts risk of accidental sh

文件：343.5 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-Channel 200 V (D-S) MOSFET

FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available

文件：3.1292 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

Fast Switching Speed

DESCRIPTION ● Drain Current –ID=9.3A@ TC=25℃ ● Drain Source Voltage- : VDSS= 200V(Min) ● Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ● Fast Switching Speed ● Low Drive Requirement APPLICATIONS ● This device is n-channel, enhancement mode, power MOSFET designed especially

文件：1.58717 Mbytes 页数：2 Pages

KERSEMI

N-Channel Power MOSFETs 200V, 9.3A, 0.30?

Features • Ultra Low On-Resistance - rDS(ON) = 0.200Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve

文件：209.86 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

文件：155.06 Kbytes 页数：11 Pages

IRF

isc N-Channel MOSFET Transistor

• DESCRITION • Efficient and reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.3Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable op

文件：119.67 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

DESCRIPTION ● Drain Current –ID=9.3A@ TC=25℃ ● Drain Source Voltage- : VDSS= 200V(Min) ● Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ● Fast Switching Speed ● Low Drive Requirement APPLICATIONS ● This device is n-channel, enhancement mode, power MOSFET designed especially

文件：74.59 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A)

Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well know

文件：155.06 Kbytes 页数：11 Pages

IRF

N-Channel Power MOSFETs 200V, 9.3A, 0.30?

Features • Ultra Low On-Resistance - rDS(ON) = 0.200Ω (Typ), VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve

文件：209.86 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体