N-Channel Power MOSFETs, 12 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ●

文件：106.61 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Power MOSFETs, 12 A, 150-200 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VQS Rated at ±20 V ●

文件：106.61 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER MOSFET

GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. FEATURES ◆ Dynamic dv/dt Rating ◆ Repetitive Avalanche Rated ◆ Fast Switching ◆ Ease of Paralleling ◆ Simple Drive

文件：137 Kbytes 页数：6 Pages

SUNTAC

N - CHANNEL 200V - 0.35ihm - 9A - TO-220/FP MESH OVERLAY] MOSFET

Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. General features ■ Extremely high dv/dt capability ■ Very low intrinsic

文件：104.75 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.25 Ω ■ AVALANCE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100 °C ■ APPLICATION ORIENTED CHARACHTERIZATION APPLICATIONS ■ HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CO

文件：190.54 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：5.97495 Mbytes 页数：8 Pages

KERSEMI

N-Channel Power MOSFET

DESCRIPTION The Nell IRF630 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliable device for use in a wi

文件：620.22 Kbytes 页数：7 Pages

NELLSEMI

尼尔半导体

N - CHANNEL 200V - 0.35W - 9A - TO-220/FP MESH OVERLAY] MOSFET

DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY] process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS n HIGH CURRENT SWITCHING n UNINTERRUPTIBLE POWER SUPPL

文件：142.94 Kbytes 页数：8 Pages

SYC

Power MOSFET

Power MOSFET VDSS = 200V, RDS(on) = 0.40 ohm, ID = 9.0 A

文件：141.99 Kbytes 页数：1 Pages

TEL

N-channel 200V - 0.35廓 - 9A TO-220/TO-220FP Mesh overlay??II Power MOSFET

文件：336.19 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体