IRF630中文资料PDF规格书
IRF630规格书详情
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
• 9A, 200V
• rDS(ON) = 0.400Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
产品属性
- 型号:
IRF630
- 功能描述:
MOSFET N-Ch 200 Volt 10 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
13+ |
TO-220 |
1000 |
特价热销现货库存 |
询价 | ||
STM |
21+ |
15000 |
TO-220-3 |
询价 | |||
har |
dc97 |
原厂封装 |
30 |
INSTOCK:50/tube/to220 |
询价 | ||
IR |
21+ |
TO-220 |
88000 |
只做正品原装现货 |
询价 | ||
IR |
23+ |
TO-220 |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
FAIRCHILD |
2023+ |
TO-220 |
5800 |
进口原装,现货热卖 |
询价 | ||
2023+ |
3000 |
进口原装现货 |
询价 | ||||
ST(意法) |
2023+ |
TO-220 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
询价 | ||
IR |
22+ |
TO-220 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
询价 | ||
IR |
21+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 |