IRF614中文资料PDF规格书
IRF614规格书详情
Description
This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. This power MOSFET is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Formerly developmental type TA17443.
Features
• 2.0A, 250V
• rDS(ON) = 2.0Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
产品属性
- 型号:
IRF614
- 功能描述:
MOSFET N-Chan 250V 2.7 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2016+ |
TO220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
IR |
20+ |
TO-220 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
1999 |
445 |
原装正品长期供货,如假包赔包换 徐小姐13714450367 |
询价 | |||
IR |
23+ |
TO-220AB |
8600 |
全新原装现货 |
询价 | ||
Vishay Siliconix |
21+ |
TO2203 |
13880 |
公司只售原装,支持实单 |
询价 | ||
IR/VISHAY |
23+ |
TO-220 |
6000 |
原装正品,支持实单 |
询价 | ||
IR |
2022 |
TO-220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
IR |
16+ |
原厂封装 |
1450 |
原装现货假一罚十 |
询价 | ||
IR |
23+ |
TO-220 |
9888 |
专做原装正品,假一罚百! |
询价 | ||
IR |
TO-220 |
6000 |
原装现货,长期供应,终端可账期 |
询价 |