N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

文件：140.72 Kbytes 页数：5 Pages

Fairchild

仙童半导体

N-CHANNEL POWER MOSFET

FEATURES • Low RDs

文件：211.06 Kbytes 页数：5 Pages

Samsung

三星

Static Drain-Source On-Resistance

DESCRIPTION ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage-: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Audio amplifier and servo motors

文件：48.28 Kbytes 页数：2 Pages

ISC

无锡固电

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE

Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-sta

文件：101.73 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

REPETITIVE AVALANCHE AND dv/dt RATED

Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state res

文件：149.25 Kbytes 页数：7 Pages

IRF

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：19.38 Kbytes 页数：2 Pages

SEME-LAB

N-CHANNEL POWER MOSFET

文件：111.97 Kbytes 页数：3 Pages

SEME-LAB

SEMICONDUCTORS

文件：2.43533 Mbytes 页数：31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

18A, 200V, 0.180 Ohm, N-Channel Power MOSFET

文件：59.29 Kbytes 页数：7 Pages

Intersil

Repetitive Avalanche Ratings

文件：150.3 Kbytes 页数：7 Pages

IRF