| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF530NS | Advanced Process Technology Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件:284.9 Kbytes 页数:11 Pages | IRF | IRF | |
IRF530NS | 丝印:D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor • FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications 文件:189.19 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | |
IRF530NS | 丝印:D2PAK;Package:TO-263;N-Channel 100-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 Rg Tested APPLICATIONS • Isolated DC/DC Converters 文件:1.01006 Mbytes 页数:8 Pages | VBSEMI 微碧半导体 | VBSEMI | |
IRF530NS | Ultra Low On-Resistance Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter 文件:1.5565 Mbytes 页数:10 Pages | KERSEMI | KERSEMI | |
IRF530NS | HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, 文件:618.07 Kbytes 页数:10 Pages | IRF | IRF | |
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件:275.75 Kbytes 页数:10 Pages | IRF | IRF | ||
Advanced Process Technology Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件:876.19 Kbytes 页数:4 Pages | IRF | IRF | ||
Advanced Process Technology Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p 文件:284.9 Kbytes 页数:11 Pages | IRF | IRF | ||
Advanced Process Technology 文件:284.9 Kbytes 页数:11 Pages | IRF | IRF | ||
Advanced Process Technology 文件:284.9 Kbytes 页数:11 Pages | IRF | IRF |
技术参数
- OPN:
IRF530NSTRLPBF
- Qualification:
Non-Automotive
- Package name:
D2PAK
- VDS max:
100 V
- RDS (on) @10V max:
90 mΩ
- ID @25°C max:
17 A
- QG typ @10V:
24.7 nC
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- VGS(th):
3 V
- Technology:
IR MOSFET™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
25+ |
950 |
全新原装!优势库存热卖中! |
询价 | |||
IR |
23+ |
TO263 |
35680 |
只做进口原装QQ:373621633 |
询价 | ||
INFINEON/英飞凌 |
2021+ |
TO-263 |
9000 |
原装现货,随时欢迎询价 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
23+ |
TO263 |
3100 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 | ||
IR |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
04+ |
原厂原装 |
3200 |
全新原装 绝对有货 |
询价 | ||
IR |
24+ |
TO-263 |
42 |
询价 | |||
IR |
24+ |
原厂封装 |
5000 |
原装现货假一罚十 |
询价 | ||
IR |
24+/25+ |
301 |
原装正品现货库存价优 |
询价 |
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