首页 >IRF530NS>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

IRF530NS

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件:284.9 Kbytes 页数:11 Pages

IRF

IRF530NS

丝印:D2PAK;Package:TO-263;Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

文件:189.19 Kbytes 页数:2 Pages

ISC

无锡固电

IRF530NS

丝印:D2PAK;Package:TO-263;N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 Rg Tested APPLICATIONS • Isolated DC/DC Converters

文件:1.01006 Mbytes 页数:8 Pages

VBSEMI

微碧半导体

IRF530NS

Ultra Low On-Resistance

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

文件:1.5565 Mbytes 页数:10 Pages

KERSEMI

IRF530NS

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,

文件:618.07 Kbytes 页数:10 Pages

IRF

IRF530NSPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件:275.75 Kbytes 页数:10 Pages

IRF

IRF530NSTRLPBF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件:876.19 Kbytes 页数:4 Pages

IRF

IRF530NSTRRPBF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件:284.9 Kbytes 页数:11 Pages

IRF

IRF530NSPBF

Advanced Process Technology

文件:284.9 Kbytes 页数:11 Pages

IRF

IRF530NSPBF_15

Advanced Process Technology

文件:284.9 Kbytes 页数:11 Pages

IRF

技术参数

  • OPN:

    IRF530NSTRLPBF

  • Qualification:

    Non-Automotive

  • Package name:

    D2PAK

  • VDS max:

    100 V

  • RDS (on) @10V max:

    90 mΩ

  • ID @25°C max:

    17 A

  • QG typ @10V:

    24.7 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

供应商型号品牌批号封装库存备注价格
INFINEON
25+
950
全新原装!优势库存热卖中!
询价
IR
23+
TO263
35680
只做进口原装QQ:373621633
询价
INFINEON/英飞凌
2021+
TO-263
9000
原装现货,随时欢迎询价
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
23+
TO263
3100
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
IR
2015+
SOP/DIP
19889
一级代理原装现货,特价热卖!
询价
IR
04+
原厂原装
3200
全新原装 绝对有货
询价
IR
24+
TO-263
42
询价
IR
24+
原厂封装
5000
原装现货假一罚十
询价
IR
24+/25+
301
原装正品现货库存价优
询价
更多IRF530NS供应商 更新时间2025-12-7 16:20:00