| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
IRF2804 | HEXFET Power MOSFET VDSS = 40V RDS(on) = 2.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope 文件：277.38 Kbytes 页数：12 Pages | IRF | IRF | |
IRF2804 | Advanced Process Technology 文件：285.49 Kbytes 页数：13 Pages | IRF | IRF | |
IRF2804 | N-Channel MOSFET Transistor 文件：339.11 Kbytes 页数：2 Pages | ISC 无锡固电 | ISC | |
IRF2804 | 采用 TO-220 封装的 40V 单 N 沟道功率 MOSFET \n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度\n \n ; | Infineon 英飞凌 | Infineon | |
HEXFET Power MOSFET VDSS = 40V RDS(on) = 2.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope 文件：277.38 Kbytes 页数：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：771.44 Kbytes 页数：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro 文件：771.44 Kbytes 页数：12 Pages | IRF | IRF | ||
HEXFET Power MOSFET VDSS = 40V RDS(on) = 2.0mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope 文件：277.38 Kbytes 页数：12 Pages | IRF | IRF | ||
AUTOMOTIVE MOSFET VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve 文件：263.09 Kbytes 页数：10 Pages | IRF | IRF | ||
HEXFET짰 Power MOSFET VDSS = 40V RDS(on) = 1.6mΩ ID = 160A Description This HEXFET®Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improve 文件：668.37 Kbytes 页数：11 Pages | IRF | IRF |
技术参数
- OPN：
IRF2804PBF
- Qualification：
Non-Automotive
- Package name：
TO220
- VDS max：
40 V
- RDS (on) @10V max：
2.3 mΩ
- ID @25°C max：
270 A
- QG typ @10V：
160 nC
- Polarity：
N
- VGS(th) min：
2 V
- VGS(th) max：
4 V
- VGS(th)：
3 V
- Technology：
IR MOSFET™
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-220 |
45000 |
INFINEON/英飞凌全新现货IRF2804即刻询购立享优惠#长期有排单订 |
询价 | ||
IR |
23+ |
TO-220 |
18961 |
公司优势库存热卖全新原装!欢迎来电 |
询价 | ||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
IR |
2015+ |
TO-220 |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
IR |
05+ |
TO-220 |
5000 |
自己公司全新库存绝对有货 |
询价 | ||
IR |
15+ |
TO-220 |
11560 |
全新原装,现货库存,长期供应 |
询价 | ||
IR |
16+ |
TO-220 |
10000 |
全新原装现货 |
询价 | ||
IR |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
IR |
2022+ |
14 |
全新原装 货期两周 |
询价 | |||
IR |
24+ |
TO-252 |
6430 |
原装现货/欢迎来电咨询 |
询价 |
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