N-Channel Power MOSFETs, 27 A, 60-100V

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FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

N-channel TrenchMOS transistor

VDSS = 100 V ID = 23 A RDS(ON) ≤ 77 mΩ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. t

文件：86.08 Kbytes 页数：9 Pages

PHI

飞利浦

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

文件：1.90441 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides infor

文件：156.99 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世科技

HEXFET POWER MOSFET

Third Generation HEXFETs from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 1. Dynamic dv/dt Rating 2. Repetitive Avalanche Rated 3. 175°C Operating Temperature

文件：177.54 Kbytes 页数：6 Pages

IRF

isc N-Channel Mosfet Transistor

DESCRITION ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ·FEATURES ·Low RDS(on) ·VGS Rated at ±20V ·Silicon Gate for Fast Switching Speed ·Rugged ·Low Drive Requirements

文件：45.2 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFET

DESCRIPTION ·Drain Current –ID= 28A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 77mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for hi

文件：308.17 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Power MOSFETs, 27 A, 60-100 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

文件：103.6 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high power, high speed applications, such as switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ● Low RDS(on) ● VGS Rated at ±20 V ●

文件：984.17 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET

N - CHANNEL100V - 00.50Ω - 30A - TO-220/TO-220FI POWER MOSFET ■ TYPICAL RDS(on) = 0.050 Ω ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175oC OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZA

文件：53.62 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体