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IRF634B

250V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRF634B

250V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRF634B

POWER MOSFET

SUNTAC

Suntac Electronic Corp.

IRF634B

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF634FP

N-CHANNEL250V-0.38ohm-8ATO-220/TO-220FPMESHOVERLAY??MOSFET

Description UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF634FP

N-channel250V-0.38廓-8ATO-220/TO-220FPMeshOverlay??PowerMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

IRF634N

PowerMOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner

VishayVishay Siliconix

威世科技威世科技半导体

IRF634N

PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn

IRF

International Rectifier

IRF634NL

PowerMOSFET(Vdss=250V,Rds(on)=0.435ohm,Id=8.0A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellkn

IRF

International Rectifier

IRF634NL

PowerMOSFET

DESCRIPTION FifthgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylow on-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesigner

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IRF634B

  • 制造商:

    Rochester Electronics LLC

  • 制造商:

    Fairchild Semiconductor Corporation

供应商型号品牌批号封装库存备注价格
FAIRCHILD/仙童
24+
TO220
8950
BOM配单专家,发货快,价格低
询价
FAIRCHILD/仙童
24+
TO 220
155401
明嘉莱只做原装正品现货
询价
FAIRCHILD/仙童
07+
TO-220
523
只做原装只有原装
询价
FAIRCHILD
24+
TO-220
30000
询价
IR
23+
TO-220
8238
询价
仙童
06+
TO-220
5000
原装库存
询价
IR
15+
TO-220
11560
全新原装,现货库存,长期供应
询价
FA/ST
24+
to220
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
FAIRCHILD
2016+
TO-220
3500
只做原装,假一罚十,公司可开17%增值税发票!
询价
FSC
17+
TO-220
6200
100%原装正品现货
询价
更多IRF634B供应商 更新时间2025-5-21 11:04:00