Advanced Power MOSFET

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS= 200V Low RDS(ON) : 0.333 (Typ.) W m

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Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

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ISC

无锡固电

200V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in

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Fairchild

仙童半导体

N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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SEME-LAB

N-Channel MOSFET in a Hermetically sealed

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SEME-LAB