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IRFU3911PBF

SMPS MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件:221.45 Kbytes 页数:10 Pages

IRF

IRFU3911PBF

SMPS MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件:4.20115 Mbytes 页数:10 Pages

KERSEMI

IRFU3911PBF

SMPS MOSFET

Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free

文件:3.84086 Mbytes 页数:10 Pages

KERSEMI

K3911

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Small gate charge: Qg= 60 nC (typ.) • Low drain-source ON resistance: RDS (ON)= 0.22 Ω(typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS= 500 μA (VDS= 600 V) • Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10

文件:193.16 Kbytes 页数:6 Pages

TOSHIBA

东芝

KTC3911

EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AMPLIFIER)

LOW NOISE AMPLIFIER APPLICATION. FEATURES · High Voltage : VCEO=120V. · Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). · High hFE: hFE=200∼700. · Low Noise : NF=1dB(Typ.), 10dB(Max.). · Complementary to KTA1517.

文件:568.6 Kbytes 页数:3 Pages

KEC

KEC(Korea Electronics)

KTC3911S

EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION

LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : VCEO=120V. • Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). • High hFE: hFE=200∼700. • Low Noise : NF=1dB(Typ.), 10dB(Max.). • Complementary to KTA1517S.

文件:107.14 Kbytes 页数:3 Pages

KEC

KEC(Korea Electronics)

详细参数

  • 型号:

    IRFU3911PBF

  • 功能描述:

    MOSFET N-CH 100V 14A I-PAK

  • RoHS:

  • 类别:

    分离式半导体产品 >> FET - 单

  • 系列:

    HEXFET®

  • 标准包装:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金属氧化物 FET

  • 特点:

    逻辑电平门

  • 漏极至源极电压(Vdss):

    200V 电流 - 连续漏极(Id) @ 25°

  • C:

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大):

    4V @ 250µA 闸电荷(Qg) @

  • Vgs:

    72nC @ 10V 输入电容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3 整包

  • 供应商设备封装:

    TO-220FP

  • 包装:

    管件

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更多IRFU3911PBF供应商 更新时间2026-1-24 14:31:00