Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Small gate charge: Qg= 60 nC (typ.) • Low drain-source ON resistance: RDS (ON)= 0.22 Ω(typ.) • High forward transfer admittance: |Yfs| = 11 S (typ.) • Low leakage current: IDSS= 500 μA (VDS= 600 V) • Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10

文件：193.16 Kbytes 页数：6 Pages

TOSHIBA

东芝

EPITAXIAL PLANAR NPN TRANSISTOR (LOW NOISE AMPLIFIER)

LOW NOISE AMPLIFIER APPLICATION. FEATURES · High Voltage : VCEO=120V. · Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). · High hFE: hFE=200∼700. · Low Noise : NF=1dB(Typ.), 10dB(Max.). · Complementary to KTA1517.

文件：568.6 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION

LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : VCEO=120V. • Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). • High hFE: hFE=200∼700. • Low Noise : NF=1dB(Typ.), 10dB(Max.). • Complementary to KTA1517S.

文件：107.14 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

SOT-23 PACKAGE

文件：375.7 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)