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IRFU4105

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件:3.74603 Mbytes 页数:10 Pages

KERSEMI

IRFU4105

Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A??

文件:144.58 Kbytes 页数:10 Pages

IRF

IRFU4105

丝印:IPAK;Package:TO-251;isc N-Channel MOSFET Transistor

文件:290.31 Kbytes 页数:2 Pages

ISC

无锡固电

IRFU4105

Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=27A⑤)

Infineon

英飞凌

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件:3.84606 Mbytes 页数:10 Pages

KERSEMI

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件:3.84791 Mbytes 页数:10 Pages

KERSEMI

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件:244.71 Kbytes 页数:11 Pages

IRF

IRFU4105PBF

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件:244.71 Kbytes 页数:11 Pages

IRF

IRFU4105PBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件:240.03 Kbytes 页数:10 Pages

IRF

IRFU4105Z

Advanced Process Technology

Description Specifically designed for Automotive applications, thi MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive

文件:1.07008 Mbytes 页数:11 Pages

KERSEMI

技术参数

  • Package :

    IPAK (TO-251)

  • VDS max:

    55.0V

  • RDS (on) max:

    24.5mΩ

  • RDS (on)(@10V) max:

    24.5mΩ

  • Polarity :

    N

  • ID (@ TC=100°C) max:

    21.0A

  • ID (@ TC=25°C) max:

    30.0A

  • ID  max:

    30.0A

  • Ptot max:

    48.0W

  • QG :

    18.0nC 

  • Mounting :

    THT

  • Qgd :

    7.0nC 

  • Tj max:

    175.0°C

  • RthJC max:

    3.12K/W

  • VGS max:

    20.0V

供应商型号品牌批号封装库存备注价格
IR
23+
TO251
3175
原厂原装正品
询价
IR
24+
TO 251
161267
明嘉莱只做原装正品现货
询价
IR
2450+
TO251
9850
只做原装正品现货或订货假一赔十!
询价
IR
05+
TO-251
12000
原装进口
询价
ir
24+
N/A
6980
原装现货,可开13%税票
询价
IR
24+
TO-251
5000
全现原装公司现货
询价
IR
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
询价
IR
25+
TO-251
9500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
NEC
23+
TO-263
69820
终端可以免费供样,支持BOM配单!
询价
INFINEON
25+
TO-251
3000
就找我吧!--邀您体验愉快问购元件!
询价
更多IRFU4105供应商 更新时间2026-1-21 13:57:00