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IRFU4105PBF中文资料IRF数据手册PDF规格书
IRFU4105PBF规格书详情
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Ultra Low On-Resistance
● Surface Mount (IRFR4105)
● Straight Lead (IRFU4105)
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号：
IRFU4105PBF
- 功能描述：
MOSFET MOSFT 55V 25A 45mOhm 22.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
45 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
IR |
12+ |
TO-251 |
13244 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
INFINEON/英飞凌 |
2450+ |
TO-251 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
IR |
12+ |
TO-251 |
13304 |
询价 | |||
IR |
21+ |
TO-251 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
IR |
25+23+ |
TO-251 |
28855 |
绝对原装正品全新进口深圳现货 |
询价 | ||
IR |
25+ |
TO-251 |
30000 |
全新原装现货,价格优势 |
询价 | ||
IR |
24+ |
TO-251 |
8 |
询价 | |||
IR |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
17+ |
TO-251 |
6200 |
100%原装正品现货 |
询价 |
