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IRFU4105PBF中文资料KERSEMI数据手册PDF规格书
IRFU4105PBF规格书详情
描述 Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
● Ultra Low On-Resistance
● Surface Mount (IRFR4105)
● Straight Lead (IRFU4105)
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
产品属性
- 型号：
IRFU4105PBF
- 功能描述：
MOSFET MOSFT 55V 25A 45mOhm 22.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-251 |
8 |
询价 | |||
IR |
1923+ |
TO-251 |
5000 |
正品原装品质假一赔十 |
询价 | ||
INFINEON/英飞凌 |
2450+ |
TO-251 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
IR |
23+ |
TO-251 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
12+ |
TO-251 |
13244 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
IR |
23+24 |
TO-251 |
29840 |
主营MOS管,二极.三极管,肖特基二极管.功率三极管 |
询价 | ||
IR |
21+ |
TO-251 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
询价 | ||
IR |
25+ |
TO-251 |
30000 |
全新原装现货,价格优势 |
询价 | ||
IR |
24+ |
TO-251 |
60000 |
询价 | |||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
询价 |
