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IRFUC20

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A)

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. Dynamicdv/dtRating RepetitiveAvalancheRated SurfaceMount(IRFRC20) StraightLead(IRFUC

IRF

International Rectifier

IRFUC20

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

VishayVishay Siliconix

威世科技威世科技半导体

IRFUC20

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

KERSEMI

Kersemi Electronic Co., Ltd.

IRFUC20

Marking:IPAK;Package:TO-251;iscN-Channel MOSFET Transistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=4.4Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFUC20

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

KERSEMI

Kersemi Electronic Co., Ltd.

IRFUC20

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

KERSEMI

Kersemi Electronic Co., Ltd.

IRFUC20

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFRC20,SiHFRC20) •Straightlead(IRFUC20,SiHFUC20) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半导体

IRFUC20PBF

HEXFET Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFRC20/SiHFRC20) •Str

IRF

International Rectifier

IRFUC20PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

VishayVishay Siliconix

威世科技威世科技半导体

IRFUC20PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

KERSEMI

Kersemi Electronic Co., Ltd.

详细参数

  • 型号:

    IRFUC20

  • 功能描述:

    MOSFET N-Chan 600V 2.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
VISHAY/威世
25+
TO252
20300
VISHAY/威世原装特价IRFUC20即刻询购立享优惠#长期有货
询价
IR
24+
TO-251
400
只做原厂渠道 可追溯货源
询价
IR
24+
N/A
8000
全新原装正品,现货销售
询价
IR
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
IR
04+
TO-251
1868
深圳原装进口现货
询价
IR
23+
TO-251
35890
询价
IR
2015+
TO251
19898
专业代理原装现货,特价热卖!
询价
VIS
23+
IPAK
10000
原装正品,假一罚十
询价
IR
23+
原厂原装
5000
全新原装
询价
IR
24+
原厂封装
4057
原装现货假一罚十
询价
更多IRFUC20供应商 更新时间2025-7-17 18:18:00