Advanced Power MOSFET

FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 2.815Ω (Typ.)

文件：224.83 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

文件：346.02 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：647.4 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：674.94 Kbytes 页数：9 Pages

KERSEMI

isc N-Channel MOSFET Transistor

文件：346.01 Kbytes 页数：2 Pages

ISC

无锡固电