HEXFET Power MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters

文件：102.74 Kbytes 页数：10 Pages

IRF

丝印：IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

• FEATURES • With TO-251(IPAK) packaging • High speed switching • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • DC-DC converters • Motor control • Switching applications

文件：247.27 Kbytes 页数：2 Pages

ISC

无锡固电

SMPS MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Lead-Free

文件：3.84795 Mbytes 页数：10 Pages

KERSEMI

HEXFET짰Power MOSFET

Benefits • Low Gate-to-Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current • Lead-Free Applications • High frequency DC-DC converters

文件：228.68 Kbytes 页数：11 Pages

IRF

HEXFET Power MOSFET

Infineon

英飞凌