3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：55.73 Kbytes 页数：7 Pages

Intersil

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：1.55974 Mbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR320,SiHFR320) • Straight lead (IRFU320,SiHFU320) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?999

文件：827.67 Kbytes 页数：13 Pages

VishayVishay Siliconix

威世威世科技公司

Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=3.1A)

DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface mount (IRFR320) • Str

文件：177.66 Kbytes 页数：6 Pages

IRF

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

文件：4.07629 Mbytes 页数：7 Pages

KERSEMI

丝印：IPAK；Package：TO-251；iscN-Channel MOSFET Transistor

文件：340.97 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

Dynamic dV/dt rating\nRepetitive avalanche rated\nSurface-mount (IRFR320,SiHFR320);

Vishay

威世

Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=3.1A)

Infineon

英飞凌

3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs

Renesas

瑞萨

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：672.47 Kbytes 页数：9 Pages

Fairchild

仙童半导体