IRFU9024PBF资料datasheet下载贸易商Vishay-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业
IRFU9024PBF	文件：5.21397 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.
IRFU9024PBF	文件：4.48925 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.
IRFU9024PBF	文件：4.48925 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.
IRFU9024PBF	文件：1.24375 Mbytes Page：13 Pages	Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9024,SiHFR9024) •Straightlead(IRFU9024,SiHFU9024) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技
IRFU9024PBF	文件：1.17972 Mbytes Page：10 Pages	HEXFET POWER MOSFET ( VDSS = -60V , RDS(on) = 0.28廓 , ID = -8.8A ) Description ThirdGenerationHEXFETsMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9024) •Stra	IRFInternational Rectifier 英飞凌英飞凌科技公司
IRFU9024PBF	文件：1.97285 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技
IRFU9024PBF	文件：4.49216 Mbytes Page：7 Pages	Power MOSFET	KERSEMI Kersemi Electronic Co., Ltd.
9024	文件：326.71 Kbytes Page：1 Pages	INSULATEDPCSPACERS/SUPPORTS INSULATEDPCSPACERS/SUPPORTS •Boardwillbeelectricallyinsulated,eliminatesneedforinsulatingwashers •Easysnap-inassembly •Notoolrequiredforinstallation •Designedfor.062(1.57)thickboards •Onepiecedesigneliminatestheneedforadditionalscrewsandnuts •Slimdesig	etc2List of Unclassifed Manufacturers etc2未分类制造商
9024	文件：1.53591 Mbytes Page：3 Pages	MilitaryManaged24-Port1GEthernetRouter/Switch FEATURESDESCRIPTION EthernetisbecomingthestandardforIP-based componentsinmilitaryandcommercialapplications onland,seaandairplatforms. TheMILTECH9024isspecificallydesignedfor battlefieldC4ISR,voice,video,sensordataacquisition andcommunicationsinplatformsthatha	ENERCON Enercon Technologies Europe AG
9024	文件：152.09 Kbytes Page：2 Pages	SnapRivets	Heyco Heyco
9024F	文件：152.09 Kbytes Page：2 Pages	SnapRivets	Heyco Heyco
AS9024	文件：240.06 Kbytes Page：4 Pages	Cooper-WheelockAS/AHSerles	GAMEWELL-FCIGamewell-FCI by Honeywell Gamewell-FCI by Honeywell
AUIRFR9024N	文件：1.0864 Mbytes Page：13 Pages	HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM	IRFInternational Rectifier 英飞凌英飞凌科技公司
AUIRFR9024N	文件：535.37 Kbytes Page：11 Pages	AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
AUIRFR9024NTR	文件：1.0864 Mbytes Page：13 Pages	HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM	IRFInternational Rectifier 英飞凌英飞凌科技公司
AUIRFR9024NTRL	文件：1.0864 Mbytes Page：13 Pages	HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM	IRFInternational Rectifier 英飞凌英飞凌科技公司
AUIRFR9024NTRL	文件：535.37 Kbytes Page：11 Pages	AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
AUIRFR9024NTRR	文件：1.0864 Mbytes Page：13 Pages	HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM	IRFInternational Rectifier 英飞凌英飞凌科技公司
AUIRFU9024N	文件：1.0864 Mbytes Page：13 Pages	HEXFET짰PowerMOSFET Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowonresistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerM	IRFInternational Rectifier 英飞凌英飞凌科技公司
AUIRFU9024N	文件：535.37 Kbytes Page：11 Pages	AUTOMOTIVEGRADE Description SpecificallydesignedforAutomotiveapplications,thisCellulardesignofHEXFET®PowerMOSFETsutilizesthelatestprocessingtechniquestoachievelowon-resistancepersiliconarea.ThisbenefitcombinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpower	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司

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详细参数

型号：
IRFU9024PBF
功能描述：
MOSFET P-Chan 60V 8.8 Amp
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	IRFU9024PBF	Vishay Siliconix	23+	TO-251AA	30000	晶体管-分立半导体产品-原装正品	询价
深圳市昌和盛利电子有限公司	IRFU9024PBF		23+	TO-251	35000	专注原装正品现货特价中量大可定	询价
深圳市赛尔通科技有限公司	IRFU9024PBF	VISHAY	23+	TO-251	65400		询价
深圳市安博威科技有限公司	IRFU9024PBF	VISHAY	21+	I-PAK (TO-251)	1125	原装正品有挂有货	询价
深圳市华高宇电子有限公司	IRFU9024PBF	VISHAY	17+		1125	I-PAK (TO-251)	询价
深圳市美思瑞电子科技有限公司	IRFU9024PBF	VISHAY	22+	TO-251	26550	原装正品，实单请联系	询价
深圳市科恒伟业电子有限公司	IRFU9024PBF	VISHAY/威世	22+	TO-251	7500	只做原装正品假一赔十!正规渠道订货!	询价
易创佳业科技（深圳）有限公司	IRFU9024PBF	VISHAY	23+	I-PAK (TO-251)	1125	原装现货支持送检	询价
深圳市高捷芯城科技有限公司	IRFU9024PBF	VISHAY(威世)	23+	TO-251	7845	支持大陆交货,美金交易。原装现货库存。	询价
深圳市莱克讯科技有限公司	IRFU9024PBF	VISHAY	2017+	TO251	42500	深圳代理原装现货进口库存(香港-日本-台湾)开17点增票	询价

更多IRFU9024PBF供应商更新时间2024-4-27 14:14:00

详细参数

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