IRFZ44ESPBF说明书PDF资料供应代理IRF-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFZ44ESPBF	文件：230.61 Kbytes Page：10 Pages	HEXFET짰 Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：230.61 Kbytes 页数：10 Pages	IRF	IRF
IRFZ44ESPBF	文件：239.75 Kbytes Page：11 Pages	Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：239.75 Kbytes 页数：11 Pages	IRF	IRF
IRFZ44ESPBF	文件：239.75 Kbytes Page：11 Pages	ADVANCED PROCESS TECHNOLOGY 文件：239.75 Kbytes 页数：11 Pages	IRF	IRF
IRFZ44ESPBF	文件：1.36463 Mbytes Page：9 Pages	丝印：D2PAK；Package：TO-263；N-Channel 60 V (D-S) MOSFET 文件：1.36463 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
IRFZ44ESPBF_15	文件：239.75 Kbytes Page：11 Pages	ADVANCED PROCESS TECHNOLOGY 文件：239.75 Kbytes 页数：11 Pages	IRF	IRF

更多IRFZ44ESPBF供应商更新时间2026-4-18 8:01:00