IRG4BC10KDPBF规格书市场行情英飞凌IRF-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IRG4BC10KDPBF	文件：265.66 Kbytes Page：10 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations 文件：265.66 Kbytes 页数：10 Pages	IRF	IRF
IRG4BC10KDPBF	文件：274.8 Kbytes Page：11 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged w 文件：274.8 Kbytes 页数：11 Pages	IRF	IRF
IRG4BC10KDPBF	文件：274.8 Kbytes Page：11 Pages	High short circuit rating optimized for motor control 文件：274.8 Kbytes 页数：11 Pages	IRF	IRF
IRG4BC10KDPBF_15	文件：274.8 Kbytes Page：11 Pages	High short circuit rating optimized for motor control 文件：274.8 Kbytes 页数：11 Pages	IRF	IRF
IRG4BC10KDPBF	文件：100 bytes Page：1 Pages	Package：TO-220-3；包装：管件类别：分立半导体产品晶体管 - UGBT、MOSFET - 单描述：IGBT 600V 9A 38W TO220AB	INFINEON 英飞凌	INFINEON

更多IRG4BC10KDPBF供应商更新时间2026-1-17 10:50:00