首页 >IRG4PC40UPBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRG4PC40UPBF | INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Benefits •Generation4IGBTsofferhighestefficiencyavailable •IGBTsoptimizedforspecifiedapplicationconditions •Designedtobeadrop-inreplacementforequivalent industry-standardGeneration3IRIGBTs Features •UltraFast:Optimizedforhighoperating frequencies8-40kHz | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRG4PC40UPBF | INSULATED GATE BIPOLAR TRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
IRG4PC40UPBF | 包装：卷带（TR） 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 40A 160W TO247AC | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
INSULATED GATE BIPOLAR TRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
InsulatedGateBipolarTransistor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
InsulatedGateBipolarTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.1.72V,@Vge=15V,Ic=20A) Benefits •Generation4IGBTsofferhighestefficiencyavailable •IGBTsoptimizedforspecifiedapplicationconditions •Designedtobeadrop-inreplacementforequivalent industry-standardGeneration3IRIGBTs Features •UltraFast:Optimizedforhighoperating frequencies8-40kHz | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A) Benefits •Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) •Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher •Lowconductionlossesandminimalminority-carrier recombinat | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A) Benefits •Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) •Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher •Lowconductionlossesandminimalminority-carrier recombinat | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.32V,@Vge=15V,Ic=31A) StandardSpeedIGBT Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A) FastCoPackIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A) FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A) FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
FitRate/EquivalentDeviceHours | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
FitRate/EquivalentDeviceHours | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A) FastCoPackIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORFastSpeedIGBT Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode) •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-247ACpackage •Lead-Free Benefit | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |
产品属性
- 产品编号：
IRG4PC40UPBF
- 制造商：
Infineon Technologies
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
卷带（TR）
- 不同 Vge、Ic 时 Vce(on)（最大值）：
2.1V @ 15V，20A
- 开关能量：
320µJ（开），350µJ（关）
- 输入类型：
标准
- 25°C 时 Td（开/关）值：
34ns/110ns
- 测试条件：
480V，20A，10 欧姆，15V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-247-3
- 供应商器件封装：
TO-247AC
- 描述：
IGBT 600V 40A 160W TO247AC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
13+ |
TO-247 |
10000 |
深圳市勤思达科技有限公司主营IR系列全新原装正品,公司现货供应IRG4PC40UPBF,欢迎咨询洽谈。 |
询价 | ||
IR |
15+ |
原厂原装 |
10474 |
进口原装现货假一赔十 |
询价 | ||
IR |
21+ |
TO-247 |
6000 |
原装正品 |
询价 | ||
DISCRETE |
25 |
IR |
10474 |
询价 | |||
IR |
23+ |
TO-247AC |
7750 |
全新原装优势 |
询价 | ||
IR |
17+ |
TO-247 |
6200 |
100%原装正品现货 |
询价 | ||
Infineon |
18+ |
NA |
3486 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
IR |
19+ |
TO247 |
75126 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
询价 | ||
IR |
TO-247AC |
20000 |
原装正品 |
询价 |
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