IRG4PC50KPBF

Short Circuit Rated UltraFast IGBT

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistribution andhigherefficiencythanpreviousgenerati

IRG4PC50KPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRG4PC50KPBF

Package：TO-247-3；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 52A 200W TO247AC

IRG4PC50KPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRG4PC50S

INSULATEDGATEBIPOLARTANSISTOR(Vces=600V,Vce(on)typ.=1.28V,@Vge=15V,Ic=41A)

VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRG4PC50S

FitRate/EquivalentDeviceHours

IRG4PC50SDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

StandarddSpeedCoPackIGBT

IRG4PC50S-P

INSULATEDGATEBIPOLARTRANSISTORStandardSpeedIGBT

•Generation4IGBTsofferhighestefficiencyavailable •IGBTsoptimizedforspecifiedapplicationconditions •Designedtobeadrop-inreplacementforequivalentindustry-standardGeneration3IRIGBTs Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequen

IRG4PC50SPBF

INSULATEDGATEBIPOLARTRANSISTOR

VCES=600V VCE(on)typ.=1.28V @VGE=15V,IC=41A Features •Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRG4PC50SPBF

INSULATEDGATEBIPOLARTRANSISTOR