首页 >IRG4RC10UDTRLP>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRG4RC10UDTRLP | 包装：管件 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 8.5A 38W DPAK | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,IC=2.0A) Features •Extremelylowvoltagedrop;1.0Vtypicalat2A,100°C •Standard:Optimizedforminimumsaturation voltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A) Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-252AApackage Benefits •Generation4IGBTsofferhig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A) Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovideshigherefficiencythanGeneration3 •IndustrystandardTO-252AApackage Benefits •Generation4IGBTsofferhig | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.39V,@Vge=15V,Ic=5.0A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgenerations | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORShortCircuitRatedUltraFastIGBT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,IC=2.0A) Features •Extremelylowvoltagedrop;1.0Vtypicalat2A,100°C •Standard:Optimizedforminimumsaturation voltageandlowoperatingfrequencies( | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.10V,@Vge=15V,Ic=2.0A) Features •Extremelylowvoltagedrop1.1V(typ)@2A •S-Series:Minimizespowerdissipationatupto3 KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives. •Tightparameterdistribution •IGBTco-packagedwithHEXFREDTMultrafast, ultra-soft-recoveryanti- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Extremelylowvoltagedrop1.1V(typ)@2A •S-Series:Minimizespowerdissipationatupto3 KHzPWMfrequencyininverterdrives,upto4 KHzinbrushlessDCdrives. •Tightparameterdistribution •IGBTco-packagedwithHEXFREDTMultrafast, ultra-soft-recoveryanti- | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A) Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswitching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration •IndustrystandardTO-252AApackage Benefits •Generation | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.15V,@Vge=15V,Ic=5.0A) UltraFastCoPackIGBT Features •UltraFast:Optimizedformediumoperatingfrequencies(8-40kHzinhardswitching,>200kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration •IGBTco-packagedwithHEXFREDTMu | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration •IGBTco-packagedwithHEXFRED™ultrafast,ultra-soft-recovery | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration •IndustrystandardTO-252AApackage •Lead-Free Benefits | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
Generation4IGBTdesignprovidestighterparameterdistributionandhighereffciencythanpreviousgeneration Features •UltraFast:Optimizedforhighoperatingfrequencies(8-40kHzinhardswiching,>200kHzinresonantmode) •Generation4IGBTdesignprovidestigherparameterdistributionandhigherefficiencythanpreviousgeneration •IndustrystandardTO-252AApackage •Lead-Free Benefits | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF |
产品属性
- 产品编号：
IRG4RC10UDTRLP
- 制造商：
Infineon Technologies
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
管件
- 不同 Vge、Ic 时 Vce(on)（最大值）：
2.6V @ 15V，5A
- 开关能量：
140µJ（开），120µJ（关）
- 输入类型：
标准
- 25°C 时 Td（开/关）值：
40ns/87ns
- 测试条件：
480V，5A，100 欧姆，15V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
表面贴装型
- 封装/外壳：
TO-252-3，DPak（2 引线 + 接片），SC-63
- 供应商器件封装：
D-Pak
- 描述：
IGBT 600V 8.5A 38W DPAK
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
DPAK |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
Infineon Technologies |
21+ |
D-Pak |
3000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
Infineon Technologies |
21+ |
TO-252-3 |
5000 |
INFINEON专卖,进口原装深圳现货 |
询价 | ||
INFINEON |
1809+ |
TO-252 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Infineon Technologies |
21+ |
DPAK |
21000 |
专业分立半导体,原装渠道正品现货 |
询价 | ||
Infineon |
22+ |
NA |
493 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
Infineon Technologies |
22+ |
DPak |
9000 |
原厂渠道,现货配单 |
询价 | ||
Infineon Technologies |
21+ |
DPak |
13880 |
公司只售原装,支持实单 |
询价 | ||
Infineon Technologies |
2022+ |
DPak |
6680 |
原厂原装，欢迎咨询 |
询价 |
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