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IRGP30B60KD-EP

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-247ADPackage •Lead-Free Benefits •BenchmarkEfficiencyfor

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGP30B60KD-EP

包装:卷带(TR) 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 60A 304W TO247AD

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IRGP30B60KD-EPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGP30B60KD-EPBF_15

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

AOK30B60D

TO247PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK30B60DL

TO247PACKAGEMARKINGDESCRIPTION

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AUIRGS30B60K

INSULATEDGATEBIPOLARTRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

AUIRGSL30B60K

INSULATEDGATEBIPOLARTRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGB30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGB30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGB30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGP30B60KD-E

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •TO-247ADPackage Benefits •BenchmarkEfficiencyforMotorControl

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS30B60

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGS30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGSL30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGSL30B60K

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •10µsShortCircuitCapability. •SquareRBSOA. •PositiveVCE(on)TemperatureCoefficient. •MaximumJunctionTemperatureratedat175°C. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransientPerformance. •Low

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRGSL30B60KPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •LowVCE(on)NonPunchThroughIGBTTechnology •10µsShortCircuitCapability •SquareRBSOA •PositiveVCE(on)TemperatureCoefficient •MaximumJunctionTemperatureratedat175°C •Lead-Free Benefits •BenchmarkEfficiencyforMotorControl •RuggedTransientPerformance

IRFInternational Rectifier

英飞凌英飞凌科技公司

产品属性

  • 产品编号:

    IRGP30B60KD-EP

  • 制造商:

    Infineon Technologies

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    卷带(TR)

  • IGBT 类型:

    NPT

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.35V @ 15V,30A

  • 开关能量:

    350µJ(开),825µJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    46ns/185ns

  • 测试条件:

    400V,30A,10 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-247-3

  • 供应商器件封装:

    TO-247AD

  • 描述:

    IGBT 600V 60A 304W TO247AD

供应商型号品牌批号封装库存备注价格
IR
15+
原厂原装
4580
进口原装现货假一赔十
询价
IR
07+/08+
TO-247-3
100
询价
DISCRETE
25
IR
4580
询价
IR
2017+
TO-247
32568
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
IR
23+
TO-247AD
7750
全新原装优势
询价
IR
2022+
TO-247
5000
只做原装公司现货
询价
Infineon
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
IR
23+
TO-247
8650
受权代理!全新原装现货特价热卖!
询价
IR
22+23+
TO247
75254
绝对原装正品现货,全新深圳原装进口现货
询价
InfineonTechnologies
19+
TO-247AD
56800
只卖原装正品!价格超越代理!可开增值税发票!
询价
更多IRGP30B60KD-EP供应商 更新时间2024-4-29 8:48:00