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AOB15B60D

600V,15AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOK15B60D

600V,15AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOT15B60D

600V,15AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

AOTF15B60D

600V,15AAlphaIGBTwithDiode

GeneralDescription TheAlphaIGBTTMlineofproductsoffersbest-in-classperformanceinconductionandswitchinglosses,withrobustshortcircuitcapability.Theyaredesignedforeaseofparalleling,minimalgatespikeunderhighdV/dtconditionsandresistancetooscillations.Thesoftcopac

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

GB15B60KD

ULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien

IRF

International Rectifier

IRGB15B60KD

ULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien

IRF

International Rectifier

IRGB15B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyfor

IRF

International Rectifier

IRGS15B60KD

ULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. Benefits •BenchmarkEfficiencyforMotorControl. •RuggedTransien

IRF

International Rectifier

IRGS15B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRGS15B60KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •LowVCE(on)NonPunchThroughIGBTTechnology. •LowDiodeVF. •10µsShortCircuitCapability. •SquareRBSOA. •UltrasoftDiodeReverseRecoveryCharacteristics. •PositiveVCE(on)TemperatureCoefficient. •Lead-Free Benefits •BenchmarkEfficiencyfor

IRF

International Rectifier

详细参数

  • 型号:

    IRGS15B60KDTRRP

  • 功能描述:

    IGBT 模块 600V 15A

  • RoHS:

  • 制造商:

    Infineon Technologies

  • 产品:

    IGBT Silicon Modules

  • 配置:

    Dual 集电极—发射极最大电压

  • VCEO:

    600 V

  • 集电极—射极饱和电压:

    1.95 V 在25

  • C的连续集电极电流:

    230 A

  • 栅极—射极漏泄电流:

    400 nA

  • 功率耗散:

    445 W

  • 最大工作温度:

    + 125 C

  • 封装/箱体:

    34MM

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
24+
210494
只做原厂渠道 可追溯货源
询价
IR
25+23+
TO-263
21653
绝对原装正品全新进口深圳现货
询价
Infineon Technologies
21+
D2PAK
800
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价
Infineon
1931+
N/A
1600
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IR
23+
TO263
50000
全新原装正品现货,支持订货
询价
INFINEON
1809+
TO-263
1675
就找我吧!--邀您体验愉快问购元件!
询价
IR
23+
TO263
50000
全新原装正品现货,支持订货
询价
Infineon
22+
NA
493
加我QQ或微信咨询更多详细信息,
询价
IR
21+
TO-263
10000
原装现货假一罚十
询价
Infineon Technologies
22+
D2PAK
9000
原厂渠道,现货配单
询价
更多IRGS15B60KDTRRP供应商 更新时间2025-7-25 16:36:00