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IRG4PC50WPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesigna

IRF

International Rectifier

IRG4PC50WPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

IRG4PC50WPBF

包装:管件 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 55A 200W TO247AC

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IRG4PC50WPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRF

International Rectifier

G4PC50F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A)

VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystandard

IRF

International Rectifier

G4PC50FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A)

VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa

IRF

International Rectifier

G4PC50U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A)

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystan

IRF

International Rectifier

G4PC50UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A)

VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-pack

IRF

International Rectifier

G4PC50W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.30V,@Vge=15V,Ic=27A)

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesign

IRF

International Rectifier

IRG4PC50F

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC50F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A)

VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystandard

IRF

International Rectifier

IRG4PC50FD

N-ChannelIGBT

DESCRIPTION ·LowSaturationVoltage:VCE(sat)=1.6V@IC=39A ·HighCurrentCapability ·HighInputImpedance ·LowConductionLoss APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRG4PC50FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A)

VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa

IRF

International Rectifier

IRG4PC50FD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC50FD-EPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC50FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC50FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC50FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC50F-EPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PC50F-EPBF

INSULATEDGATEBIPOLARTRANSISTOR

Features •Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-247ADpackage •Lead-Free Benefits •

IRF

International Rectifier

产品属性

  • 产品编号:

    IRG4PC50WPBF

  • 制造商:

    Infineon Technologies

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    管件

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.3V @ 15V,27A

  • 开关能量:

    80µJ(开),320µJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    46ns/120ns

  • 测试条件:

    480V,27A,5 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-247-3

  • 供应商器件封装:

    TO-247AC

  • 描述:

    IGBT 600V 55A 200W TO247AC

供应商型号品牌批号封装库存备注价格
IR
13+
TO-247
10000
深圳市勤思达科技有限公司主营IR全系列原装正品,公司现货供应IRG4PC50WPBF,欢迎咨询洽谈。
询价
IR/INFINEON
20+
TO-247
2500
IGBT 600V 55A 200W 通孔 TO-247AC
询价
IR
23+
TO-247
20540
保证进口原装现货假一赔十
询价
IR
2020+
TO-247
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
Infineon(英飞凌)
23+
TO-247
924
原厂订货渠道,支持BOM配单一站式服务
询价
IR
23+
TO-247
65400
询价
INFINEON/英飞凌
21+
TO-247
36800
进口原装现货 假一赔十
询价
INFINEON/英飞凌
20+
TO-247
2500
进口原装支持含税
询价
IR
22+
TO-247
9800
只做原装正品假一赔十!正规渠道订货!
询价
INFINEON/英飞凌
22+
TO-247
4800
专营INFINEON/英飞凌全新原装进口正品
询价
更多IRG4PC50WPBF供应商 更新时间2024-12-7 11:04:00