首页 >IRG4PC50WPBF>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IRG4PC50WPBF | INSULATED GATE BIPOLAR TRANSISTOR Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesigna | IRF International Rectifier | IRF | |
IRG4PC50WPBF | INSULATED GATE BIPOLAR TRANSISTOR | IRF International Rectifier | IRF | |
IRG4PC50WPBF | 包装:管件 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 55A 200W TO247AC | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
INSULATED GATE BIPOLAR TRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystandard | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A) VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystan | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A) VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-pack | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.30V,@Vge=15V,Ic=27A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesign | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystandard | IRF International Rectifier | IRF | ||
N-ChannelIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=1.6V@IC=39A ·HighCurrentCapability ·HighInputImpedance ·LowConductionLoss APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa | IRF International Rectifier | IRF | ||
FitRate/EquivalentDeviceHours | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRF International Rectifier | IRF | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-247ADpackage •Lead-Free Benefits • | IRF International Rectifier | IRF |
产品属性
- 产品编号:
IRG4PC50WPBF
- 制造商:
Infineon Technologies
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装:
管件
- 不同 Vge、Ic 时 Vce(on)(最大值):
2.3V @ 15V,27A
- 开关能量:
80µJ(开),320µJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
46ns/120ns
- 测试条件:
480V,27A,5 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-247-3
- 供应商器件封装:
TO-247AC
- 描述:
IGBT 600V 55A 200W TO247AC
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
13+ |
TO-247 |
10000 |
深圳市勤思达科技有限公司主营IR全系列原装正品,公司现货供应IRG4PC50WPBF,欢迎咨询洽谈。 |
询价 | ||
IR/INFINEON |
20+ |
TO-247 |
2500 |
IGBT 600V 55A 200W 通孔 TO-247AC |
询价 | ||
IR |
23+ |
TO-247 |
20540 |
保证进口原装现货假一赔十 |
询价 | ||
IR |
2020+ |
TO-247 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-247 |
924 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
IR |
23+ |
TO-247 |
65400 |
询价 | |||
INFINEON/英飞凌 |
21+ |
TO-247 |
36800 |
进口原装现货 假一赔十 |
询价 | ||
INFINEON/英飞凌 |
20+ |
TO-247 |
2500 |
进口原装支持含税 |
询价 | ||
IR |
22+ |
TO-247 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-247 |
4800 |
专营INFINEON/英飞凌全新原装进口正品 |
询价 |
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