首页 >IRG4PC50FD-EPBF>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IRG4PC50FD-EPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRG4PC50FD-EPBF | 包装：管件 封装/外壳：TO-247-3 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 600V 70A 200W TO247AD | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystandard | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A) VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystan | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.65V,@Vge=15V,Ic=27A) VCES=600V VCE(on)typ.=1.65V @VGE=15V,IC=27A Features •UltraFast:Optimizedforhighoperatingfrequencies8-40kHzinhardswitching,>200kHzinresonantmode •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-pack | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.30V,@Vge=15V,Ic=27A) Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC (powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesign | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •Industrystandard | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
FitRate/EquivalentDeviceHours | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
FitRate/EquivalentDeviceHours | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.45V,@Vge=15V,Ic=39A) VCES=600V VCE(on)typ.=1.45V @VGE=15V,IC=39A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
N-ChannelIGBT DESCRIPTION ·LowSaturationVoltage:VCE(sat)=1.6V@IC=39A ·HighCurrentCapability ·HighInputImpedance ·LowConductionLoss APPLICATIONS ·SynchronousRectificationinSMPS ·MotorDrives ·UPS,PFC ·Generalpurposeinverter | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR Features •Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IndustrystandardTO-247ADpackage •Lead-Free Benefits • | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
FastSpeedIGBT-INSULATEDGATEBIPOLARTRANSISTOR FastSpeedIGBT INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | ||
IGBT DESCRIPTION ·LowGateDriveRequirement ·HighCurrentHandlingCapability ·ShortCircuitCapability ·HighPowerDensity APPLICATIONS ·PowerInverters ·MotorDrives ·UPS,PFC ·HighVoltageAuxiliaries | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |
产品属性
- 产品编号：
IRG4PC50FD-EPBF
- 制造商：
Infineon Technologies
- 类别：
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装：
管件
- 不同 Vge、Ic 时 Vce(on)（最大值）：
1.6V @ 15V，39A
- 开关能量：
1.5mJ（开），2.4mJ（关）
- 输入类型：
标准
- 25°C 时 Td（开/关）值：
55ns/240ns
- 测试条件：
480V，39A，5 欧姆，15V
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-247-3
- 供应商器件封装：
TO-247AC
- 描述：
IGBT 600V 70A 200W TO247AD
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
20+ |
TO-247 |
20000 |
原装正品现货 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO-247 |
6000 |
原装正品 |
询价 | ||
IR |
21+ |
TO-247 |
6880 |
只做原装,支持实单 |
询价 | ||
INFINEON/IR |
1907+ |
NA |
200 |
20年老字号,原装优势长期供货 |
询价 | ||
IR |
21+ |
TO-247 |
6880 |
只做原装,质量保证 |
询价 | ||
INFINEON/英飞凌 |
2122+ |
TO-247 |
8890 |
原装现货,假一赔十,价格优势 |
询价 | ||
IR/INTERSIL |
22+ |
TO-247 |
29865 |
主营IR//英飞凌.终端BOM表可配单 |
询价 | ||
INFINEON/英飞凌 |
22+ |
TO-247 |
59000 |
郑重承诺只做原装进口现货 |
询价 | ||
IR |
23+ |
TO-247AD |
7750 |
全新原装优势 |
询价 | ||
IR |
1436+ |
TO-247 |
30000 |
绝对原装进口现货可开增值税发票 |
询价 |
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