首页 >IRG4PC30FPBF>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
IRG4PC30FPBF | INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRG4PC30FPBF | INSULATED GATE BIPOLAR TRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRG4PC30FPBF | 包装:卷带(TR) 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 31A 100W TO247AC | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | ||
INSULATED GATE BIPOLAR TRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
FitRate/EquivalentDeviceHours | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A) FastCoPackIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
FitRate/EquivalentDeviceHours | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEFastCoPack1GBT VCES=600V VCE(on)typ.=1.59V @VGE=15V,IC=17A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
FitRate/EquivalentDeviceHours | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhighereffi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A) ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgen | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOALRTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Tighterparameterdistributionandhigherefficiency thanpreviousgenerations •IGBTco-packaged | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTOR | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
INSULATEDGATEBIPOLARTRANSISTOR Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10μs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevio | IRFInternational Rectifier 英飞凌英飞凌科技公司 |
产品属性
- 产品编号:
IRG4PC30FPBF
- 制造商:
Infineon Technologies
- 类别:
分立半导体产品 > 晶体管 - UGBT、MOSFET - 单
- 包装:
卷带(TR)
- 不同 Vge、Ic 时 Vce(on)(最大值):
1.8V @ 15V,17A
- 开关能量:
230µJ(开),1.18mJ(关)
- 输入类型:
标准
- 25°C 时 Td(开/关)值:
21ns/200ns
- 测试条件:
480V,17A,23 欧姆,15V
- 工作温度:
-55°C ~ 150°C(TJ)
- 安装类型:
通孔
- 封装/外壳:
TO-247-3
- 供应商器件封装:
TO-247AC
- 描述:
IGBT 600V 31A 100W TO247AC
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
TO-247 |
942 |
原厂订货渠道,支持BOM配单一站式服务 |
询价 | ||
IR |
2105+ |
TO-247 |
10053 |
询价 | |||
INFINEON/英飞凌 |
22+ |
TO-247 |
4800 |
专营INFINEON/英飞凌全新原装进口正品 |
询价 | ||
英飞凌 |
新批次 |
N/A |
1500 |
询价 | |||
IR |
23+ |
TO-247 |
9896 |
询价 | |||
IR |
23+ |
TO-247AC |
7750 |
全新原装优势 |
询价 | ||
IR |
16+ |
原厂封装 |
2500 |
原装现货假一罚十 |
询价 | ||
IR |
16+ |
TO-3P |
10000 |
全新原装现货 |
询价 | ||
Infineon |
18+ |
NA |
3415 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
ir |
dc13 |
原厂封装 |
175 |
INSTOCK:25/tube |
询价 |
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