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IRG4PC30WPBF

INSULATED GATE BIPOLAR TRANSISTOR

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesignandc

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30WPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30WPBF

包装:卷带(TR) 封装/外壳:TO-247-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 23A TO247AC

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IRG4PC30WPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

G4PC30F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener

IRFInternational Rectifier

英飞凌英飞凌科技公司

G4PC30UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

FastSpeedIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-247ACpackage Benefits •Gener

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30F

FitRate/EquivalentDeviceHours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

FastCoPackIGBT Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30FD

FitRate/EquivalentDeviceHours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODEFastCoPack1GBT

VCES=600V VCE(on)typ.=1.59V @VGE=15V,IC=17A Features •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IGBTco-packa

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30FPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30FPBF

INSULATEDGATEBIPOLARTRANSISTORFastSpeedIGBT

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhighereffi

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30K

FitRate/EquivalentDeviceHours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Tighterparameterdistributionandhigherefficiencythanpreviousgen

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30KDPBF

INSULATEDGATEBIPOALRTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Tighterparameterdistributionandhigherefficiency thanpreviousgenerations •IGBTco-packaged

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRG4PC30KDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRFInternational Rectifier

英飞凌英飞凌科技公司

产品属性

  • 产品编号:

    IRG4PC30WPBF

  • 制造商:

    Infineon Technologies

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    卷带(TR)

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    2.7V @ 15V,12A

  • 开关能量:

    130µJ(开),130µJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    25ns/99ns

  • 测试条件:

    480V,12A,23 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-247-3

  • 供应商器件封装:

    TO-247AC

  • 描述:

    IGBT 600V 23A TO247AC

供应商型号品牌批号封装库存备注价格
IR
07+/08+
TO-247-3
42
询价
IR
15+
TO-247
11560
全新原装,现货库存,长期供应
询价
IR
23+
TO-247AC
7750
全新原装优势
询价
ir
dc12
原厂封装
25
INSTOCK:25/tube
询价
IRF
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
InfineonTechnologies
19+
TO-247AC
56800
只卖原装正品!价格超越代理!可开增值税发票!
询价
IR
23+
TO247AC
12300
全新原装真实库存含13点增值税票!
询价
International Rectifier
2022+
1
全新原装 货期两周
询价
Infineon
1931+
N/A
493
加我qq或微信,了解更多详细信息,体验一站式购物
询价
IR
2015+
TO-247
8
全新原装正品现货
询价
更多IRG4PC30WPBF供应商 更新时间2024-5-16 16:30:00