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IRG4BC30FPBF

Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR

Features •Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage •Lead-Free Benefits •Generatio

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC30FPBF

INSULATED GATE BIPOLAR TRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC30FPBF

包装:管件 封装/外壳:TO-220-3 类别:分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述:IGBT 600V 31A TO220AB

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

IRG4BC30FPBF_15

INSULATED GATE BIPOLAR TRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUIRG4BC30S-S

INSULATEDGATEBIPOLARTRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUIRG4BC30S-SL

INSULATEDGATEBIPOLARTRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUIRG4BC30U-S

INSULATEDGATEBIPOLARTRANSISTOR

Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching, >200kHzinresonantmode •IndustrystandardD2Pak&TO-262package •Lead-Free,RoHSCompliant •AutomotiveQualified* Benefits •TypicalApplications:SMPS,PFC

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUIRG4BC30U-SL

INSULATEDGATEBIPOLARTRANSISTOR

Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching, >200kHzinresonantmode •IndustrystandardD2Pak&TO-262package •Lead-Free,RoHSCompliant •AutomotiveQualified* Benefits •TypicalApplications:SMPS,PFC

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUIRG4BC30USTRL

INSULATEDGATEBIPOLARTRANSISTOR

Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching, >200kHzinresonantmode •IndustrystandardD2Pak&TO-262package •Lead-Free,RoHSCompliant •AutomotiveQualified* Benefits •TypicalApplications:SMPS,PFC

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUIRG4BC30USTRR

INSULATEDGATEBIPOLARTRANSISTOR

Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching, >200kHzinresonantmode •IndustrystandardD2Pak&TO-262package •Lead-Free,RoHSCompliant •AutomotiveQualified* Benefits •TypicalApplications:SMPS,PFC

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

G4BC30KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

ShortCircuitRatedUltraFastIGBT Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •tighterparameterdistributionandhigherefficiencythanpreviousgenerations

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

G4BC30UD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.95V,@Vge=15V,Ic=12A)

Features •UltraFast:Optimizedforhighoperating frequencies8-40kHzinhardswitching,>200 kHzinresonantmode •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

G4BC30W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)max.=2.70V,@Vge=15V,Ic=12A)

Features •DesignedexpresslyforSwitch-ModePowerSupplyandPFC(powerfactorcorrection)applications •Industry-benchmarkswitchinglossesimproveefficiencyofallpowersupplytopologies •50reductionofEoffparameter •LowIGBTconductionlosses •Latest-generationIGBTdesign

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

G4BC30W

INSULATEDGATEBIPOLARTRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

G4BC30W

INSULATEDGATEBIPOLARTRANSISTOR

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC30

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.21V,@Vge=15V,Ic=16A)

Features •Highshortcircuitratingoptimizedformotorcontrol, tsc=10µs,@360VVCE(start),TJ=125°C, VGE=15V •Combineslowconductionlosseswithhigh switchingspeed •Latestgenerationdesignprovidestighterparameter distributionandhigherefficiencythanprevious

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC30

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features •Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Benefits •Generation4IGBTsoff

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC30

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 •IGBTco-packagedwithHEXFREDTMultrafast, ultra-s

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC30F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.59V,@Vge=15V,Ic=17A)

Features •Fast:optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 •IndustrystandardTO-220ABpackage Benefits •Generation4IGBTsoff

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRG4BC30F

FitRate/EquivalentDeviceHours

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

产品属性

  • 产品编号:

    IRG4BC30FPBF

  • 制造商:

    Infineon Technologies

  • 类别:

    分立半导体产品 > 晶体管 - UGBT、MOSFET - 单

  • 包装:

    管件

  • 不同 Vge、Ic 时 Vce(on)(最大值):

    1.8V @ 15V,17A

  • 开关能量:

    230µJ(开),1.18mJ(关)

  • 输入类型:

    标准

  • 25°C 时 Td(开/关)值:

    21ns/200ns

  • 测试条件:

    480V,17A,23 欧姆,15V

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220AB

  • 描述:

    IGBT 600V 31A TO220AB

供应商 型号 品牌 批号 封装 库存 备注 价格
INFINEON/IR
11+
TO-220-3
750
询价
INFINEON/IR
1907+
NA
2150
20年老字号,原装优势长期供货
询价
INFINEON/IR
21+
NA
800
只做原装,假一罚十
询价
IR
22+
TO-220
3520
只做原装进口 免费送样!!
询价
IR
17+
TO220
4129
主营三极管量大发货深圳现货
询价
IR
11+
TO-220
175
询价
IR
2017+
TO-220
21546
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
IR
23+
TO-220AB
7750
全新原装优势
询价
IR
17+
TO220
6200
100%原装正品现货
询价
IR
2016+
TO-220
6000
公司只做原装,假一罚十,可开17%增值税发票!
询价
更多IRG4BC30FPBF供应商 更新时间2024-3-28 14:01:00