IRG4BC20KD-SPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULRTAFAST SOFR RECOVERY DIODE

Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneration •IGBTco-packagedwithHEXFREDTMul

IRG4BC20KD-STRLP

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

ShortCircuitRatedUltraFastIGBT Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgene

IRG4BC20KS

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRG4BC20K-S

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.27V,@Vge=15V,Ic=9.0A)

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgeneratio

IRG4BC20K-SPBF

ShortCircuitRatedUltraFastIGBT

Features •Highshortcircuitratingoptimizedformotorcontrol,tsc=10µs,@360VVCE(start),TJ=125°C,VGE=15V •Combineslowconductionlosseswithhighswitchingspeed •Latestgenerationdesignprovidestighterparameterdistributionandhigherefficiencythanpreviousgenerations •

IRG4BC20MD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardTO-220ABpackage Benefits •Offershighestefficiencyandshortcircuitcapabilityforinterme

IRG4BC20MDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardTO-220ABpackage •Lead-Free Benefits •Offershighestefficiencyandshortcircuitcapabilityforintermed

IRG4BC20MDS

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardD2Pakpackage Benefits •Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication

IRG4BC20MD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.85V,@Vge=15V,Ic=11A)

Features •Rugged:10µsecshortcircuitcapableatVGS=15V •LowVCE(on)for4to10kHzapplications •IGBTCo-packagedwithultra-soft-recoveryantiparalleldiode •IndustrystandardD2Pakpackage Benefits •Offershighestefficiencyandshortcircuitcapabilityforintermediateapplication

IRG4BC20MD-S

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE