IRFU330数据手册原装现货仙童半导体IRF-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRFU330	文件：112.95 Kbytes Page：10 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：112.95 Kbytes 页数：10 Pages	IRF	IRF
IRFU3303	文件：112.95 Kbytes Page：10 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：112.95 Kbytes 页数：10 Pages	IRF	IRF
IRFU3303	文件：876.94 Kbytes Page：10 Pages	Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：876.94 Kbytes 页数：10 Pages	KERSEMI	KERSEMI
IRFU3303PBF	文件：3.86139 Mbytes Page：10 Pages	ULTRA LOW ON-RESISTANCE Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：3.86139 Mbytes 页数：10 Pages	KERSEMI	KERSEMI
IRFU3303PBF	文件：251.95 Kbytes Page：10 Pages	HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide 文件：251.95 Kbytes 页数：10 Pages	IRF	IRF
IRFU330B	文件：671.71 Kbytes Page：9 Pages	400V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi 文件：671.71 Kbytes 页数：9 Pages	Fairchild 仙童半导体	Fairchild
IRFU3303PBF	文件：256.459 Kbytes Page：11 Pages	Ultra Low On-Resistance 文件：256.459 Kbytes 页数：11 Pages	IRF	IRF
IRFU330A	文件：345.77 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：345.77 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRFU330B	文件：345.77 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：345.77 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
IRFU3303	文件：300 bytes Page：1 Pages	MOSFET N-CH 30V 33A I-PAK	Infineon 英飞凌	Infineon

详细参数

型号：
IRFU330
制造商：
IRF
制造商全称：
International Rectifier
功能描述：
HEXFET Power MOSFET

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	IRFU330	IR	05+	TO-251	12000	原装进口	询价
深圳市河锋鑫科技有限公司	IRFU330	IR	22+	TO-251	6000	终端可免费供样,支持BOM配单	询价
深圳市宏世佳电子科技有限公司	IRFU330	IR	2025+	TO-252	4675	全新原厂原装产品、公司现货销售	询价
深圳市安富世纪电子有限公司	IRFU330	IR	23+	TO-251	8000	只做原装现货	询价
天津市博通航睿技术有限公司	IRFU330	IR	23+	TO-251	7000		询价
深圳市昌和盛利电子有限公司	IRFU330	IR	NEW	TO-251	35890	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市一线半导体有限公司	IRFU3303PBF	IR	24+	TO-251	414		询价
深圳市华来深电子有限公司	IRFU3303PBF	IR	23+	TO-251	11846	一级代理商现货批发,原装正品,假一罚十	询价
深圳市正迈科技有限公司	IRFU330BTU	FSC/ON	23+	原包装原封 □□	4090	原装进口特价供应特价，原装元器件供应，支持开发样品更多详细咨询库存	询价
上海市鑫鸿达电子	IRFU3303PBF	International Rectifier	2022+		1	全新原装货期两周	询价

更多IRFU330供应商更新时间2025-12-1 17:03:00

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