HEXFET Power MOSFET

文件：389.89 Kbytes 页数：11 Pages

IRF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

Features Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient and tight distribution of parameters 5µs Short Circuit SOA Lead-Free, RoHS Compliant Benefits High efficiency in a wide range of a

文件：714.86 Kbytes 页数：14 Pages

IRF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

Features    Low VCE(ON) and switching losses    Square RBSOA and maximum junction temperature 175°C    Positive VCE (ON) temperature coefficient    5µs Short Circuit SOA    Lead-Free, RoHS Compliant Benefits    High efficiency in a wide range of applications and switching       frequencies

文件：971.84 Kbytes 页数：17 Pages

INFINEON

英飞凌

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

Features    Low VCE(ON) and switching losses    Square RBSOA and maximum junction temperature 175°C    Positive VCE (ON) temperature coefficient    5µs Short Circuit SOA    Lead-Free, RoHS Compliant Benefits    High efficiency in a wide range of applications and switching       frequencies

文件：971.84 Kbytes 页数：17 Pages

INFINEON

英飞凌