Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)

VDSS = 55V RDS(on) = 0.075Ω ID = 19A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques that achieve extremely low on-resistance per silicon area and allow electrostatic discharge protection to be integrated in the gate structure. These be

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IRF

Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A)

Infineon

英飞凌

Switching Regulator Applications

文件：416.22 Kbytes 页数：6 Pages

TOSHIBA

东芝

LINEAR INTEGRATED CIRCUIT

文件：160.11 Kbytes 页数：4 Pages

Samsung

三星

LOW DROPOUT VOLTAGE REGULATORS

DESCRIPTION The L2600 series og three terminal positive regulators is specially designed to stabilize power supplies car instrumentation in vehicles with 12V battery. Available with output voltages equal to 5V, 8.5 V, 10V, they can supply an output current to 500mA. These devices are protect

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STMICROELECTRONICS

意法半导体