HEXFET짰 Power MOSFET ( VDSS = 55V , RDS(on) = 14.5m廓 , ID = 42A )

VDSS = 55V RDS(on) = 14.5mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

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AUTOMOTIVE MOSFET

文件：4.26084 Mbytes 页数：11 Pages

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HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：135.08 Kbytes 页数：10 Pages

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HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

文件：135.08 Kbytes 页数：10 Pages

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Advanced Process Technology

文件：909.19 Kbytes 页数：10 Pages

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