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IRF540S

N-channel TrenchMOS transistor

VDSS=100V ID=23A RDS(ON)≤77mΩ GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching •Lowthermalresistance Applications:- •d.c.t

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

IRF540S

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半导体

IRF540S

Marking:D2PAK;Package:TO-263;N-Channel 100-V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFETS •175°CJunctionTemperature •LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF540S

Power MOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatas

VishayVishay Siliconix

威世科技威世科技半导体

IRF540S

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=77mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·AutomaticTestEquipment ·High-SideSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF540S_V01

Power MOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatas

VishayVishay Siliconix

威世科技威世科技半导体

IRF540SPBF

HEXFET짰 Power MOSFET

DESCRIPTION ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovid

IRF

International Rectifier

IRF540SPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半导体

IRF540STRLPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半导体

IRF540STRRPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半导体

详细参数

  • 型号:

    IRF540S

  • 功能描述:

    MOSFET N-Chan 100V 28 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
IR
24+
TO-263
9700
绝对原装正品现货假一罚十
询价
IR
22+
D2-PAK
9450
原装正品,实单请联系
询价
IR
25+
TO-263
6500
十七年专营原装现货一手货源,样品免费送
询价
INTERNATIONA
05+
原厂原装
4231
只做全新原装真实现货供应
询价
IR
2015+
DIP/SMD
19889
一级代理原装现货,特价热卖!
询价
IOR
23+
TO263
7750
全新原装优势
询价
VIS
23+
D2PAK
14000
原装正品,假一罚十
询价
IR
24+
D2-Pak
8866
询价
IR
24+
原装
6980
原装现货,可开13%税票
询价
IR
23+
TO-263
35890
询价
更多IRF540S供应商 更新时间2025-5-28 10:19:00