Power MOSFET

文件：237.79 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：237.79 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：660.84 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Advenced Power MOSFET (N-CHANNEL)

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 1.169 Ω (Typ.)

文件：257.8 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体