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IRFI610B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFS610A

AdvencedPowerMOSFET(N-CHANNEL)

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):1.169Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFS610A

iscSiliconNPNPowerTransistor

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •AvalancheRuggedTechnology •RuggedGateOxideTechnology •LowerInputCapacitance •ImprovedGateCharge •ExtendedSafeOperatingArea

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRFS610B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features •3.3A,200V,RDS(on)=1.5Ω@VGS=10V •Lowgatecharge(typical7.2nC) •LowCrss(typical6.8pF) •Fastswitch

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRFW610B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRL610

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.046Ω ID=3.3A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):1.185Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRL610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.046Ω ID=3.3A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):1.185Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRL610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRLI610A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=1.5Ω ID=3.3A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦150°COperatingTemperature ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

IRLI610A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    IRFI610B

  • 制造商:

    FAIRCHILD

  • 制造商全称:

    Fairchild Semiconductor

  • 功能描述:

    200V N-Channel MOSFET

供应商型号品牌批号封装库存备注价格
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
FAIRCHILD/仙童
23+
TO262
28888
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
22+
6000
终端可免费供样,支持BOM配单
询价
IR
23+
8000
只做原装现货
询价
IR
23+
7000
询价
IR/ST/仙童
23+
TO-220F
3000
全新原装
询价
VISHAY
1503+
TO220-3
3000
就找我吧!--邀您体验愉快问购元件!
询价
VISHAY/威世
23+
TO220FP
6000
原装正品,支持实单
询价
Vishay Siliconix
2022+
TO-220-3 全封装,隔离接片
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
VISHAY/威世
22+
TO220FP
25000
只做原装进口现货,专注配单
询价
更多IRFI610B供应商 更新时间2025-7-24 17:41:00