200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hi

文件：660.84 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

200V N-Channel MOSFET

ONSEMI

安森美半导体

Advenced Power MOSFET (N-CHANNEL)

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 1.169 Ω (Typ.)

文件：257.8 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc Silicon NPN Power Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area

文件：59 Kbytes 页数：2 Pages

ISC

无锡固电

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features • 3.3A, 200V, RDS(on)= 1.5Ω@VGS= 10 V • Low gate charge ( typical 7.2 nC) • Low Crss ( typical 6.8 pF) • Fast switch

文件：866.99 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体