P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The µPA610TA is a switching device which can be driven directly by a 2.5 V power source. The µPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5 V power source.

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NEC

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MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The mPA610TA is a switching device which can be driven directly by a 2.5 V power source. The mPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circ

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RENESAS

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Dual P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications • Battery Switch for Portable Devices • Computers - Bus Switch - Load Switch

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VBSEMI

微碧半导体

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION\nThe µPA610TA is a switching device which can be driven directly by a 2.5 V power source.\nThe µPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.FEATURES\n• Can be driven by a 2.5 V power source.\n• Low Gate Cut • Can be driven by a 2.5 V power source.\n• Low Gate Cut-off Voltage. ;

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