MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

文件：57.77 Kbytes 页数：6 Pages

NEC

瑞萨

isc Silicon NPN RF Transistor

DESCRIPTION • With SOT-363 packaging • Low voltage use • Ultra super mini mold package • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise and small signal amplifiers from VHF band to UHF band

文件：197.85 Kbytes 页数：2 Pages

ISC

无锡固电

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

文件：57.77 Kbytes 页数：6 Pages

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES • Low Noise, High Gain • Operable at Low Voltage • Small Feed-back Capacitance Cre = 0.3 pF TYP. • Built-in 2 Transistors (2 × 2SC4958)

文件：57.77 Kbytes 页数：6 Pages

NEC

瑞萨

SUPER FAST RECTIFIERS

文件：256.74 Kbytes 页数：2 Pages

DSK

Super Fast Rectifiers

文件：175.98 Kbytes 页数：2 Pages

LUGUANG

鲁光电子