P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION The µPA653TT is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V dr

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NEC

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MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The μPA653TT is a switching device, which can be driven directly by a 4.0 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • 4.0 V

文件：297.32 Kbytes 页数：10 Pages

RENESAS

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P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Devices - Cellular Phone - DSC - Portable Game Console - MP3 - GPS

文件：1.05873 Mbytes 页数：9 Pages

VBSEMI

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P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

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