NPN SILICON HIGH FREQUENCY TRANSISTOR

FEATURES • Built-in high-gain transistor fT = 9.0 GHz TYP., S21e2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz • Built-in 2 transistors (2 × 2SC5436) • Flat-lead 6-pin thin-type ultra super minimold package

文件：32.84 Kbytes 页数：3 Pages

NEC

瑞萨

VIM-808-DP

文件：36.89 Kbytes 页数：1 Pages

VARITRONIX

京东方精电

OCTAL HIGH SIDE DRIVER FOR THE AUTOMATION MARKET

OCTAL HIGH SIDE DRIVER FOR THE AUTOMATION MARKET The VN808 is the first octal single chip high-side driver developed in VIPower M0-3 technology. Both the control and power stage use N-MOS technology. VN808 has 8 different channels with single protection and diagnostic functions integrated on a si

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STMICROELECTRONICS

意法半导体

Octal channel high side driver

Description The VN808SR is a monolithic device designed in STMicroelectronics VIPower M0-3 technology, intended for driving any kind of load with one side connected to ground. Active current limitation combined with thermal shutdown and automatic restart, protect the device against overload. In o

文件：372.08 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体